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| SFF70N10C SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * Rugged construction with poly silicon gate * Ultra low RDS (on) and high transconductance * Excellent high temperature stability * Very fast switching speed * Fast recovery and superior dv/dt performance * Increased reverse energy capability * Low input and transfer capacitance for easy paralleling * Hermetically sealed package * TX, TXV and Space Level screening available * Replaces: SMM70N10 Types 70 AMP 600 VOLT 0.030 N-CHANNEL POWER MOSFET TO-254 Ceramic MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55oC o SYMBOL VDS V GS ID Top & Tstg R0JC PD VALUE 100 + 20 56 1/ -55 to +150 .83 150 114 UNIT Volts Volts Amps o C o C/W Watts CASE OUTLINE: TO-254 Ceramic Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00245B SFF70N10C SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250A) SYMBOL MIN TYP MAX UNIT BVDSS RDS(on) ID(on) VGS(th) gfs IDSS 100 70 2.0 20 - 0.025 0.03 4.0 250 250 +100 -100 140 40 80 40 180 100 40 1.8 200 - V Drain to Source on State Resistance (VGS = 10 V, ID = 45 A) A V On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) 40 110 30 50 25 15 80 15 1.0 125 0.3 4100 1200 310 Gate Threshold Voltage (VDS = VGS, ID = 250A) Forward Transconductance (VDS > ID(on) X RDS (on) Max, IDS = 45A) Smho A nA Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DelayTime Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) At rated VGS VGS = 10 V 80% rated VDS Rated ID VDD =50% rated VDS ID=70A RG=8 VGS=10V IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD nC nsec V nsec Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ =25 C IF = ID di/dt = 100A/sec VGS =0 Volts VDS =25 Volts f =1 MHz o trr QRR Ciss Coss Crss C pF For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ Maximum current limited by package, die rated at 75A. |
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